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CMS12P03Q8-HF

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CMS12P03Q8-HF

MOSFET P-CH 30V 12A 8SOP

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Comchip Technology CMS12P03Q8-HF is a P-Channel MOSFET designed for power management applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 12A at 25°C. The Rds On is specified at a maximum of 15mOhm at 10A and 10V gate-source voltage. It offers a power dissipation capability of 3W at 25°C. The MOSFET is packaged in an 8-SOP (Small Outline Package) and supports surface mounting. Key parameters include a gate charge (Qg) of 44.4 nC at 10V and input capacitance (Ciss) of 2419 pF at 15V. Operating temperature ranges from -55°C to 150°C. This component is suitable for use in various industrial and consumer electronics sectors requiring efficient power switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)3W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package8-SOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs44.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2419 pF @ 15 V

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