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CMS02P06T6-HF

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CMS02P06T6-HF

MOSFET P-CH 60V 2.4A SOT23-6

Manufacturer: Comchip Technology

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Comchip Technology CMS02P06T6-HF is a P-Channel MOSFET designed for power switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.4A at 25°C with a maximum power dissipation of 1.1W. The On-Resistance (Rds On) is specified at 175mOhm maximum at 2A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 4.6 nC at 4.5V and Input Capacitance (Ciss) of 531 pF at 15V. The device operates over a temperature range of -55°C to 150°C. Supplied in a SOT-23-6 package, this component is suitable for surface mounting and is delivered in Tape & Reel packaging. Applications include power management and general switching in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Rds On (Max) @ Id, Vgs175mOhm @ 2A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageSOT-23-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds531 pF @ 15 V

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