CEZ6R86L-HF
MOSFET N-CH 60V 56A 8DFNManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology CEZ6R86L-HF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component offers a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) up to 56A at 25°C (Tc). The low on-resistance (Rds On) is specified at a maximum of 6.4mOhm at 25A and 10V Vgs. Featuring a 4.5V to 10V gate drive range, the device exhibits a maximum gate charge (Qg) of 42.8 nC at 10V and an input capacitance (Ciss) of 1619 pF at 25V. With a maximum power dissipation of 2.5W (Ta) and 83W (Tc), it is housed in an 8-DFN (5x6) package suitable for surface mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in various industries including automotive, industrial power supplies, and battery management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-DFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 42.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1619 pF @ 25 V |
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