CEH2315-HF
MOSFET P-CH 30V 5A 6TSOPManufacturer: Comchip Technology
Categories: Single FETs, MOSFETs
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Comchip Technology P-Channel MOSFET, part number CEH2315-HF, is designed for efficient switching applications. This device features a drain-source breakdown voltage (Vdss) of 30V and a continuous drain current (Id) capability of 5A at 25°C ambient temperature, with a maximum power dissipation of 2W. The Rds(On) is specified at a maximum of 50mOhm when driven at 3.8A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 11.2 nC (max) at 10V Vgs and input capacitance (Ciss) of 650 pF (max) at 15V Vds. The CEH2315-HF utilizes a 6-TSOP surface mount package and operates within a temperature range of -55°C to 150°C. This component is suitable for use in power management, battery charging, and general-purpose switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 15 V |
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