CDBJSC8650-G
DIODE SIL CARB 650V 8A TO220-2Manufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJSC8650-G is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-220-2 package, offers a maximum DC reverse voltage of 650 V and a forward current of 8 A. Its peak forward voltage drop is 1.7 V at 8 A, with a reverse leakage current of 100 µA at 650 V. The CDBJSC8650-G features an exceptionally fast switching speed, characterized by a reverse recovery time of 0 ns for currents greater than 500 mA. Operating across a junction temperature range of -55°C to 175°C, it is suitable for demanding power supply, solar inverter, and electric vehicle charging applications. The device is supplied in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 560pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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