CDBJSC5650-G
DIODE SIL CARBIDE 650V 5A TO220FManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJSC5650-G, a Silicon Carbide Schottky diode, offers robust performance for demanding applications. This through-hole component, packaged in a TO-220F (TO-220-2 Full Pack), features a maximum DC reverse voltage of 650 V and a forward voltage drop of 1.7 V at 5 A. With an average rectified forward current (Io) of 5 A, it exhibits a minimal reverse leakage of 100 µA at 650 V. The CDBJSC5650-G is distinguished by zero reverse recovery time (trr) for currents exceeding 500 mA, indicating superior switching characteristics. Its operating junction temperature ranges from -55°C to 175°C. This device is utilized in power factor correction, switch mode power supplies, and high-frequency power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 430pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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