CDBJSC51200-G
DIODE SIL CARB 1.2KV 5A TO220-2Manufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJSC51200-G is a Silicon Carbide (SiC) Schottky diode designed for demanding applications. This component offers a 1200 V reverse voltage (Vr) and a 5 A average rectified forward current (Io). Its low forward voltage drop (Vf) is 1.7 V at 5 A, and it exhibits a minimal reverse leakage current of 100 µA at 1200 V. Featuring a "No Recovery Time" characteristic for currents greater than 500 mA (Io), this diode is optimized for high-frequency switching. The CDBJSC51200-G has a junction operating temperature range of -55°C to 175°C and a capacitance of 475 pF at 0 V, 1 MHz. Packaged in a TO-220-2 through-hole configuration, it is suitable for power supply units, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 475pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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