CDBJSC10650-G
DIODE SIL CARB 650V 10A TO220FManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJSC10650-G is a 650V, 10A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. This through-hole component, housed in a TO-220F package, offers a maximum forward voltage (Vf) of 1.7V at 10A and exhibits virtually no reverse recovery time. Its low leakage current of 100 µA at 650V and a junction operating temperature range of -55°C to 175°C make it suitable for demanding environments. The diode's capacitance is rated at 710pF at 0V and 1MHz. It finds application in power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 710pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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