CDBJSC101700-G
DIODE SIL CARB 1.7KV 35A TO220-2Manufacturer: Comchip Technology
Categories: Single Diodes
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The Comchip Technology CDBJSC101700-G is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This through-hole component, housed in a TO-220-2 package, offers a maximum DC reverse voltage of 1700 V and an average rectified current capability of 35 A. The forward voltage drop at 10 A is rated at a maximum of 1.7 V. Engineered with SiC technology, this diode exhibits zero reverse recovery time for currents greater than 500 mA, contributing to superior switching efficiency. It features a low reverse leakage current of 100 µA at its maximum reverse voltage and a junction capacitance of 1400 pF at 0 V, 1 MHz. The operating junction temperature range is -55°C to 175°C. This device is suitable for power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1400pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1700 V |
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