CDBJSC101200-G
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology's CDBJSC101200-G is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This component features a maximum DC reverse voltage (Vr) of 1200 V and an average rectified current (Io) of 10 A. The forward voltage drop (Vf) is specified at a maximum of 1.7 V at 10 A. With a junction operating temperature range of -55°C to 175°C, it offers robust performance in demanding environments. The diode exhibits a low reverse leakage current of 100 µA at its maximum reverse voltage and a capacitance of 780 pF at 0 V and 1 MHz. Notably, it has zero reverse recovery time, contributing to improved efficiency in power switching applications. The CDBJSC101200-G is housed in a TO-220-2 package suitable for through-hole mounting and is supplied in tube packaging. This SiC diode is utilized in power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 780pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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