CDBJFSC8650-G
DIODE SIL CARBIDE 650V 8A TO220FManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJFSC8650-G. This Silicon Carbide Schottky diode offers a 650V reverse voltage rating and an 8A forward current capability. The CDBJFSC8650-G features a low forward voltage of 1.7V at 8A and exhibits negligible reverse recovery time, characterized by "No Recovery Time > 500mA (Io)". Its low reverse leakage current is rated at 100 µA @ 650 V, with a capacitance of 560pF @ 0V, 1MHz. The device is housed in a TO-220F package for through-hole mounting. Operating junction temperatures range from -55°C to 175°C. This component finds application in power factor correction, switch mode power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 560pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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