CDBJFSC3650-G
DIODE SIL CARBIDE 650V 3A TO220FManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJFSC3650-G is a Silicon Carbide (SiC) Schottky diode designed for demanding applications. This through-hole component features a 650V reverse voltage rating and a maximum forward voltage (Vf) of 1.7V at 3A. Its operational junction temperature ranges from -55°C to 175°C. The CDBJFSC3650-G exhibits a low reverse leakage current of 100 µA at 650V and boasts zero reverse recovery time (trr) for current exceeding 500mA (Io), characteristic of SiC Schottky technology. With a capacitance of 190pF at 0V and 1MHz, this diode is suitable for power factor correction (PFC), switch mode power supplies (SMPS), and electric vehicle charging infrastructure. The device is supplied in a TO-220F package, suitable for tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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