CDBJFSC10650-G
DIODE SIL CARB 650V 10A TO220FManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJFSC10650-G is a 650V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a TO-220F, features a maximum forward voltage (Vf) of 1.7V at 10A and a minimal reverse leakage current of 100 µA at 650V. Its capacitance is rated at 710pF at 0V, 1MHz. The SiC technology offers a significant advantage with no discernible reverse recovery time (trr) for currents greater than 500mA. Operating across a wide junction temperature range of -55°C to 175°C, the CDBJFSC10650-G is suitable for high-power conversion applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 710pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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