CDBJFSC101200-G
DIODE SIL CARB 1.2KV 10A TO220FManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBJFSC101200-G is a Silicon Carbide (SiC) Schottky diode featuring a 1200 V reverse voltage rating and a 10 A average rectified current capability. This through-hole component, housed in a TO-220F package, exhibits a low forward voltage drop of 1.7 V at 10 A and a reverse leakage current of 100 µA at 1200 V. The device boasts a remarkably fast switching characteristic with no discernible reverse recovery time above 500 mA, making it suitable for demanding high-frequency power conversion applications. Its robust construction and wide operating temperature range of -55°C to 175°C junction temperature ensure reliability in industrial and automotive sectors. The capacitance at zero volts reverse bias is 780 pF, measured at 1 MHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 780pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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