CDBDSC8650-G
DIODE SIL CARB 650V 25.5A DPAKManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBDSC8650-G is a 650V, 25.5A Silicon Carbide (SiC) Schottky diode in a DPAK (TO-252-3) surface mount package. This device features a maximum forward voltage (Vf) of 1.7V at 8A and a reverse leakage current of 100 µA at 650V. With a junction operating temperature range of -55°C to 175°C, it exhibits no significant reverse recovery time above 500mA. The diode's capacitance at 0V and 1MHz is 550pF. Its robust construction and performance characteristics make it suitable for applications in power factor correction, power supply efficiency, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 25.5A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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