CDBDSC51200-G
DIODE SIL CARBIDE 1.2KV 18A DPAKManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBDSC51200-G is a 1200V, 18A Silicon Carbide Schottky diode. This surface mount component, packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, exhibits a low forward voltage of 1.7V at 5A and a minimal reverse leakage current of 100 µA at its maximum reverse voltage. The CDBDSC51200-G features zero reverse recovery time above 500mA (Io), characteristic of Silicon Carbide technology, making it suitable for demanding high-frequency power applications. Its operating junction temperature range is -55°C to 175°C. This diode is frequently utilized in power factor correction, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 475pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 18A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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