CDBDSC3650-G
DIODE SIL CARBIDE 650V 11A DPAKManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBDSC3650-G is a 650V, 11A Silicon Carbide (SiC) Schottky Diode. This surface mount device features a low forward voltage drop of 1.7V at 3A and a reverse leakage current of 100 µA at 650V. The CDBDSC3650-G offers zero reverse recovery time for currents above 500mA, enabling high-efficiency switching applications. Its DPAK (TO-252-3, DPAK) package facilitates thermal management and integration into power electronics designs. The component operates across a wide junction temperature range of -55°C to 175°C. This SiC diode is suitable for use in power supply units, electric vehicle charging, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 11A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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