CDBDSC10650-G
DIODE SIL CARBIDE 650V 10A DPAKManufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology CDBDSC10650-G is a 650V, 10A Silicon Carbide (SiC) Schottky diode in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. This device features a maximum forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 100 µA at 650V. The CDBDSC10650-G exhibits zero reverse recovery time (trr) for currents above 500mA, making it suitable for high-frequency switching applications. Its operating junction temperature range is -55°C to 175°C, and it has a capacitance of 690pF at 0V, 1MHz. This component is commonly utilized in power supply, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 690pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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