CDBD2SC21200-G
DIODE SIL CARB 1.2KV 6.2A TO263Manufacturer: Comchip Technology
Categories: Single Diodes
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Comchip Technology SiC Schottky Diode, part number CDBD2SC21200-G, offers a 1200 V reverse voltage and 6.2 A average rectified current. This surface mount TO-263 (D2PAK) packaged device features a low forward voltage of 1.7 V at 2 A and a reverse leakage of 100 µA at its maximum reverse voltage. The Silicon Carbide technology provides a no recovery time characteristic for currents greater than 500 mA (Io). Operating junction temperature ranges from -55°C to 175°C. This component is suitable for applications in power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 136pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 6.2A |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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