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AS9013-L-HF

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AS9013-L-HF

TRANS NPN 25V 0.5A SOT23-3

Manufacturer: Comchip Technology

Categories: Single Bipolar Transistors

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Comchip Technology AS9013-L-HF is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector current (Ic) capability of up to 500 mA and a collector-emitter breakdown voltage (Vce(max)) of 25 V. Its transition frequency (fT) is 150 MHz, making it suitable for moderate frequency operations. The device dissipates a maximum power of 300 mW and features a low collector cutoff current of 100 nA. Minimum DC current gain (hFE) is specified at 120 at 50 mA collector current and 1 V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600 mV at 50 mA collector current and 50 mA base current. This transistor is housed in a SOT-23-3 (TO-236-3, SC-59) surface-mount package and is supplied on tape and reel. It operates within an ambient temperature range of up to 150°C (TJ). Applications include consumer electronics, industrial control, and telecommunications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 50mA, 1V
Frequency - Transition150MHz
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)25 V
Power - Max300 mW

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