CDBGBSC20650-G
DIODE ARR SIC SCHOT 650V TO247Manufacturer: Comchip Technology
Categories: Diode Arrays
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Comchip Technology CDBGBSC20650-G is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, packaged in a TO-247-3, operates at a maximum DC reverse voltage of 650 V. Each diode exhibits a forward voltage (Vf) of 1.7 V at 10 A and a high average rectified current capability of 33 A (DC). The device boasts an exceptionally low reverse leakage current of 100 µA at 650 V and a remarkable "no recovery time" characteristic above 500 mA. Operating across a junction temperature range of -55°C to 175°C, this diode array is suitable for demanding applications in power conversion, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 33A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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