CDBGBSC101200-G
DIODE ARR SIC SCHOT 1200V TO247Manufacturer: Comchip Technology
Categories: Diode Arrays
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Comchip Technology CDBGBSC101200-G is a Silicon Carbide (SiC) Schottky diode array featuring one pair of common cathode diodes. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 1200 V and an average rectified current of 18 A per diode. The forward voltage drop is 1.7 V at 5 A, with a reverse leakage current of 100 µA at 1200 V. Designed for high-speed switching, it exhibits no recovery time above 500 mA (Io). The operating junction temperature range is -55°C to 175°C. This device is suitable for applications in high-voltage power supplies, electric vehicle charging, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 18A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
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