CZDM1003N TR
MOSFET N-CH 100V 3A SOT-223Manufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CZDM1003N-TR is an N-Channel MOSFET designed for surface mount applications in a SOT-223 package. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 2W. The Rds On is specified at 150mOhm maximum at 2A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 15 nC maximum at 10V and input capacitance (Ciss) of 975 pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power management, industrial automation, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 975 pF @ 25 V |