CXDM3069N TR PBFREE
MOSFET N-CH 30V 6.9A SOT-89Manufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CXDM3069N-TR-PBFREE is an N-Channel MOSFET designed for surface mount applications in a SOT-89 package. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.9A at 25°C. The Rds On is specified at a maximum of 30mOhm at 7A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 11nC at 10V and input capacitance (Ciss) of 580pF at 15V. The maximum power dissipation is 1.2W. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | SOT-89 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 15 V |
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