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CTLM7110-M832D TR

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CTLM7110-M832D TR

TRANSISTOR

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Central Semiconductor Corp N-Channel MOSFET, part number CTLM7110-M832D-TR, is designed for efficient power switching applications. This surface mount device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 1A at 25°C. The N-Channel MOSFET technology offers a low on-resistance (Rds On) of 250mOhm maximum at 100mA and 1.5V gate-source voltage. It includes an isolated Schottky diode for enhanced performance. Key parameters include a maximum gate charge (Qg) of 2.4nC at 4.5V and input capacitance (Ciss) of 220pF maximum at 10V. The device operates across a wide temperature range of -65°C to 150°C (TJ) and is supplied in an 8-TDFN exposed pad package on tape and reel. This component is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs250mOhm @ 100mA, 1.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.65W (Ta)
Vgs(th) (Max) @ Id1.2V @ 1mA
Supplier Device PackageTLM832D
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds220 pF @ 10 V

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