CTLDM8002A-M621H BK
MOSFET P-CH 50V 280MA TLM621HManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CTLDM8002A-M621H-BK is a P-Channel MOSFET designed for surface mount applications. This device features a 50V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 280mA at 25°C. The Rds(On) is specified at a maximum of 2.5 Ohms with an Id of 500mA and Vgs of 10V. Key electrical parameters include a gate charge (Qg) of 0.72 nC at 4.5V and input capacitance (Ciss) of 70pF at 25V. The MOSFET operates within a temperature range of -65°C to 150°C. The TLM621H package configuration provides for efficient thermal dissipation, supporting a maximum power dissipation of 1.6W (Ta). This component is suitable for use in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 280mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TLM621H |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | 20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 25 V |
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