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CTLDM8002A-M621 TR

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CTLDM8002A-M621 TR

MOSFET P-CH 50V 280MA TLM621

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

CTL DM8002A-M621-TR from Central Semiconductor Corp is a P-Channel MOSFET designed for efficient power management. This device features a 50V drain-to-source voltage and a continuous drain current capability of 280mA at 25°C. The Rds On is specified at a maximum of 2.5 Ohms when driven at 10V Vgs with 500mA Id. With a gate charge of 0.72 nC (max) at 4.5V Vgs and input capacitance of 70 pF (max) at 25V Vds, it offers optimized switching characteristics. The TLM621 package, a 6-PowerVFDFN, facilitates surface mounting for demanding applications. Power dissipation is rated at 900mW (Ta). This component is suitable for use in automotive, industrial, and consumer electronics sectors requiring precise voltage and current control. It operates across a temperature range of -65°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerVFDFN
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C280mA (Ta)
Rds On (Max) @ Id, Vgs2.5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTLM621
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs0.72 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds70 pF @ 25 V

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