CTLDM7120-M621H TR
MOSFET N-CH 20V 1A TLM621HManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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The Central Semiconductor Corp CTLDM7120-M621H-TR is an N-Channel MOSFET designed for various electronic applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 1A at 25°C. The Rds On is specified at a maximum of 100mOhm when conducting 500mA with a 4.5V gate-source voltage. With a maximum power dissipation of 1.6W (Ta), this MOSFET is suitable for power management and switching functions. The CTLDM7120-M621H-TR utilizes a TLM621H package, a 6-XFDFN with an exposed pad, designed for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 2.4 nC @ 4.5 V and an Input Capacitance (Ciss) of 220 pF @ 10 V. This component operates within a temperature range of -65°C to 150°C (TJ). Its specifications make it applicable in sectors such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Supplier Device Package | TLM621H |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | 8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 10 V |
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