CTLDM3590 TR
MOSFET N-CH 20V 160MA TLM3D6D8Manufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CTLDM3590-TR is an N-Channel MOSFET designed for surface mount applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 160mA at 25°C, with a maximum power dissipation of 125mW (Ta). The Rds On is specified at 3Ohm maximum for 100mA drain current and 4.5V gate-source voltage. Key parameters include a Gate Charge (Qg) of 0.46 nC maximum at 4.5V Vgs, and an input capacitance (Ciss) of 9 pF maximum at 15V Vds. The part is supplied in a TLM3D6D8 package, which is a 3-XFDFN, on tape and reel. This component is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 125mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | TLM3D6D8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | 8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.46 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9 pF @ 15 V |
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