CP775-CWDM3011P-WN
MOSFET P-CH 30V 11A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp P-Channel MOSFET die, part number CP775-CWDM3011P-WN, offers a 30V drain-source breakdown voltage and continuous drain current capability of 11A at 25°C (Ta). This MOSFET features a maximum on-resistance of 20mOhm at 11A and 10V Vgs, achieved with a 4.5V to 10V drive voltage. Key parameters include a gate charge (Qg) of 80 nC (max) at 10V and input capacitance (Ciss) of 3100 pF (max) at 8V Vds. Operating across a temperature range of -55°C to 150°C (TJ), this die is suitable for surface-mount applications. Its specifications make it relevant for power management solutions in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 8 V |
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