CP775-CWDM3011P-CM
MOSFET P-CH 30V 11A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp CP775-CWDM3011P-CM is a P-Channel MOSFET die designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 11A at 25°C. The Rds On is specified at a maximum of 20mOhm at 11A and 10V Vgs. With a maximum power dissipation of 2.5W (Ta), this die is suitable for surface mount configurations. Key parameters include a Gate Charge (Qg) of 80 nC at 10V Vgs and an input capacitance (Ciss) of 3100 pF at 8V Vds. The operating temperature range is -55°C to 150°C (TJ). This specific MOSFET die is utilized in sectors such as industrial automation, power management, and consumer electronics where efficient switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 8 V |
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