CP773-CMPDM302PH-WN
MOSFET P-CH 30V 2.4A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp's P-Channel MOSFET, part number CP773-CMPDM302PH-WN, offers a 30V drain-to-source voltage (Vdss) and continuous drain current (Id) capability of 2.4A at 25°C (Ta). This surface mount die features a maximum on-resistance (Rds On) of 91mOhm at 1.2A and 4.5V gate-source voltage. The device operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of 12V. Key parameters include a gate charge (Qg) of 9.6 nC (max) at 5V and input capacitance (Ciss) of 800 pF (max) at 10V. This MOSFET is suitable for applications in power management and general switching within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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