CP773-CMPDM302PH-CT
MOSFET P-CH 30V 2.4A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp P-Channel MOSFET, part number CP773-CMPDM302PH-CT, is a 30V device with a continuous drain current of 2.4A (Ta). This bare die component utilizes Metal Oxide technology and is provided in tray packaging. Key specifications include a maximum Rds On of 91mOhm at 1.2A and 4.5V Vgs, with a gate-source threshold voltage of 1.4V (250µA). Input capacitance (Ciss) is a maximum of 800pF at 10V Vds, and gate charge (Qg) is 9.6nC at 5V Vgs. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial sectors where efficient power switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 91mOhm @ 1.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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