CP771-CXDM4060P-WN
MOSFET P-CH 40V 6A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp's CP771-CXDM4060P-WN is a P-Channel MOSFET presented as a bare die, suitable for advanced power management applications. This component offers a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 6A at 25°C (Ta). Key parameters include a low on-resistance (Rds On) of 65mOhm at 6A and 10V, and a gate charge (Qg) of 6.5 nC maximum at 4.5V. Input capacitance (Ciss) is specified at 750 pF maximum @ 25V. The device operates across an extended temperature range of -55°C to 150°C (TJ). This MOSFET technology is frequently utilized in industrial, automotive, and consumer electronics where efficient power switching is critical. The maximum gate-source voltage (Vgs) is ±25V, with a threshold voltage (Vgs(th)) of 3V maximum at 250µA. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Die |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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