CP771-CXDM4060P-CT
MOSFET P-CH 40V 6A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp P-Channel MOSFET, part number CP771-CXDM4060P-CT, is a discrete semiconductor device designed for high-performance applications. This die-level component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. The on-resistance (Rds On) is specified at a maximum of 65mOhm at 6A with a 10V gate-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 6.5 nC maximum at 4.5V Vgs and input capacitance (Ciss) of 750 pF maximum at 25V Vds. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum Vgs of ±25V. It is suitable for surface mount applications where space is critical. This component finds utility in various industrial and consumer electronics sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Die |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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