CP375-CWDM3011N-WN
MOSFET N-CH 11A 30V BARE DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp N-Channel MOSFET die, part number CP375-CWDM3011N-WN. This bare die offers 30V drain-to-source voltage and a continuous drain current of 11A at 25°C. With a maximum Rds(on) of 20mOhm at 11A and 10V Vgs, it provides efficient switching characteristics. Key parameters include 6.3 nC gate charge and 860 pF input capacitance. Designed for surface mount applications, this component operates within a temperature range of -55°C to 150°C. Its 2.5W power dissipation rating makes it suitable for demanding environments. This MOSFET is utilized in power management and high-density circuit designs across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 15 V |
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