CP375-CWDM3011N-CT
MOSFET N-CH 11A 30V BARE DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp N-Channel MOSFET, part number CP375-CWDM3011N-CT, is a bare die device designed for high-efficiency switching applications. This MOSFET features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at 25°C (Ta), with a maximum power dissipation of 2.5W. The on-resistance (Rds On) is specified at a low 20mOhm at 11A and 10V Vgs. Key parameters include a gate charge (Qg) of 6.3 nC at 5V Vgs and input capacitance (Ciss) of 860 pF at 15V Vds. The operating temperature range is from -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial, and consumer electronics where compact, high-performance power management solutions are required. The device is supplied in a bare die format, intended for surface mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 15 V |
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