CP373-CTLDM303N-WN
MOSFET N-CH 30V 3.6A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp N-Channel MOSFET die, part number CP373-CTLDM303N-WN, offers a 30V drain-source voltage and 3.6A continuous drain current. This die-level component features a low on-resistance of 78mOhm maximum at 1.8A and 2.5V Vgs. The gate threshold voltage is 1.2V maximum at 250µA, with a recommended gate drive from 2.5V to 4.5V and a maximum gate-source voltage of 12V. Input capacitance (Ciss) is 590pF maximum at 10V Vds, and gate charge (Qg) is 13nC maximum at 4.5V Vgs. Designed for surface mount applications, this MOSFET die operates across a temperature range of -55°C to 150°C (TJ). It is suitable for power management and switching applications in various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 1.8A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 10 V |
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