CP373-CMPDM303NH-WN
MOSFET N-CH 30V 3.6A DIEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp CP373-CMPDM303NH-WN is an N-Channel MOSFET designed for high-efficiency switching applications. This die-level component features a 30V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 3.6A at 25°C (Ta). The Rds On is specified at a maximum of 78mOhm at 1.8A and 2.5V Vgs. Key parameters include a low gate charge (Qg) of 13 nC at 4.5V Vgs and an input capacitance (Ciss) of 590 pF at 10V Vds. The device operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for use in power management, automotive, and industrial control systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 1.8A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 10 V |
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