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CMPDM302PH TR

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CMPDM302PH TR

MOSFET P-CH 30V 2.4A SOT-23F

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Central Semiconductor Corp CMPDM302PH-TR is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 2.4 A at 25°C (Ta). The device offers a low Rds On of 91 mOhm maximum at 1.2 A, 4.5 V, with a gate threshold voltage (Vgs(th)) of 1.4 V maximum at 250 µA. Key parameters include input capacitance (Ciss) of 800 pF maximum at 10 V and gate charge (Qg) of 9.6 nC maximum at 5 V. The maximum power dissipation is 350 mW at 25°C (Ta). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is supplied in a SOT-23F package and is available on tape and reel. It is commonly utilized in power management and switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-3 Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.4A (Ta)
Rds On (Max) @ Id, Vgs91mOhm @ 1.2A, 4.5V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageSOT-23F
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V

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