CMPDM203NH TR
MOSFET N-CH 20V 3.2A SOT-23FManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CMPDM203NH-TR is a 20V N-Channel MOSFET designed for surface mount applications. This device features a continuous drain current (Id) of 3.2A at 25°C with a maximum power dissipation of 350mW. The Rds On is specified at 50mOhm maximum at 1.6A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 10 nC maximum at 4.5V Vgs and input capacitance (Ciss) of 395 pF maximum at 10V Vds. Operating temperature range is -55°C to 150°C. The component is supplied in a SOT-23F package, presented in Tape & Reel (TR) format. This MOSFET is suitable for use in power management and switching applications across various electronic industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-3 Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 1.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SOT-23F |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 395 pF @ 10 V |
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