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CMPDM202PH TR

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CMPDM202PH TR

MOSFET P-CH 20V 2.3A SOT-23F

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Central Semiconductor Corp CMPDM202PH-TR is a P-Channel MOSFET designed for efficient power management. This component features a Drain to Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.3A at 25°C. The Rds On is specified at a maximum of 88mOhm at 1.2A and 5V gate drive. The device operates with a gate-source threshold voltage (Vgs(th)) of 1.4V at 250µA and supports gate drive voltages from 2.5V to 5V for optimal performance. Key parameters include a maximum gate charge (Qg) of 12 nC at 5V and an input capacitance (Ciss) of 800 pF at 10V. With a power dissipation of 350mW (Ta), this MOSFET is suitable for surface mounting in a SOT-23F package, supplied in tape and reel. Operating temperature ranges from -55°C to 150°C. This component finds application in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-3 Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Rds On (Max) @ Id, Vgs88mOhm @ 1.2A, 5V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageSOT-23F
Drive Voltage (Max Rds On, Min Rds On)2.5V, 5V
Vgs (Max)12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V

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