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CEDM7001VL TR PBFREE

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CEDM7001VL TR PBFREE

MOSFET N-CH 20V 100MA SOT883VL

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Central Semiconductor Corp's CEDM7001VL-TR-PBFREE is an N-Channel MOSFET designed for surface mount applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 100mA at 25°C. The SOT-883VL package offers a compact footprint with a maximum power dissipation of 100mW. Key electrical characteristics include a maximum Rds On of 3 Ohms at 10mA and 4V, and a gate threshold voltage (Vgs(th)) of 900mV at 250µA. The MOSFET exhibits a gate charge (Qg) of 0.57 nC and input capacitance (Ciss) of 9 pF, with drive voltages ranging from 1.5V to 4V. Operating temperature spans from -65°C to 150°C. This component finds application in portable electronics and low-power switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 10mA, 4V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device PackageSOT-883VL
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Vgs (Max)10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs0.57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds9 pF @ 3 V

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