CDMSJ2204.7-650 SL
SUPER JUNCTION MOSFETSManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp CDMSJ2204-7-650-SL is an N-Channel Super Junction MOSFET designed for high-voltage applications. This component features a 650 V breakdown voltage and a continuous drain current rating of 4.7 A at 25°C (Tc), with a maximum power dissipation of 22.5 W (Tc). Key parameters include a maximum Rds(On) of 990 mOhm at 2 A and 10 V, an input capacitance (Ciss) of 306 pF at 400 V, and a gate charge (Qg) of 9.7 nC at 10 V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-220FP (TO-220-3 Full Pack) through-hole configuration, this MOSFET is suitable for power supply units, industrial power control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 990mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 22.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 306 pF @ 400 V |
Request a Quote
Clients Also Buy
CWDM305N TR13 PBFREE
MOSFET N-CH 30V 5.8A 8SOIC
CP775-CWDM3011P-CT
MOSFET P-CH 30V 11A DIE
CDMSJ2207.3-650 SL
SUPER JUNCTION MOSFETS
