CDMSJ22013.8-650 SL
SUPER JUNCTION MOSFETSManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CDMSJ22013-8-650-SL is an N-Channel Super Junction MOSFET designed for high voltage applications. This component features a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 13.8A at 25°C (Tc), with a maximum power dissipation of 35.7W (Tc). The Rds On is specified at a maximum of 280mOhm at 4.4A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC @ 10V and input capacitance (Ciss) of 1040 pF @ 400V. The device operates within a temperature range of -55°C to 150°C (TJ). Mounting is facilitated via a through-hole package, specifically a TO-220FP. This MOSFET is suitable for power supply designs, power factor correction (PFC), and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 400 V |
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