CDM4-650 TR13 PBFREE
MOSFET N-CH 650V 4A DPAKManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CDM4-650-TR13-PBFREE is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 4 A at 25°C. The Rds On is specified at a maximum of 2.7 Ohms at 2 A and 10 V gate drive. With a maximum gate charge (Qg) of 11.4 nC at 10 V and input capacitance (Ciss) of 463 pF at 25 V, it offers efficient switching characteristics. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. Power dissipation capabilities include 620mW (Ta) and 77W (Tc). This MOSFET is suitable for use in power supply, lighting, and industrial control applications. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 620mW (Ta), 77W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 463 pF @ 25 V |
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