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CDM4-600LR TR13 PBFREE

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CDM4-600LR TR13 PBFREE

MOSFET N-CH 600V 4A DPAK

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Central Semiconductor Corp CDM4-600LR-TR13-PBFREE is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 4A (Tc). The on-resistance (Rds On) is specified at a maximum of 950mOhm at 2A, 10V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, facilitating efficient thermal management with a maximum power dissipation of 38W (Tc). Key parameters include a Gate Charge (Qg) of 11.59 nC at 10V and an input capacitance (Ciss) of 328 pF at 100V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power supply, lighting, and industrial control applications. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs950mOhm @ 2A, 10V
FET Feature-
Power Dissipation (Max)38W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs11.59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds328 pF @ 100 V

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