CDM2208-800FP SL PBFREE
MOSFET N-CH 800V 8A TO220FPManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CDM2208-800FP-SL-PBFREE is an N-Channel MOSFET designed for high voltage applications. This device features a maximum drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 8A at 25°C. The low on-resistance of 1.6 Ohms at 4A and 10V gate drive makes it suitable for efficient power switching. With a maximum power dissipation of 57W (Tc), the CDM2208-800FP-SL-PBFREE is housed in a TO-220FP package for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 24.45 nC and input capacitance (Ciss) of 1110 pF, both measured at specified voltages. This component is utilized in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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