CDM2206-800LR SL PBFREE
MOSFET N-CH 800V 6A TO220Manufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp MOSFET, N-Channel, CDM2206-800LR-SL-PBFREE. This TO-220-3 packaged component features an 800V Drain-to-Source Voltage (Vdss) and a continuous drain current of 6A (Tc) at 25°C. The N-Channel MOSFET offers a maximum Rds On of 950mOhm at 3A, 10V, with a gate charge of 24.3 nC at 10V. It supports a gate-source voltage up to 30V and a threshold voltage (Vgs(th)) of 4V at 250µA. With a maximum power dissipation of 110W (Tc), this component is suitable for through-hole mounting and operates within a temperature range of -55°C to 150°C. This device is commonly utilized in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.3 nC @ 10 V |
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