CDM2206-800LR
MOSFET N-CH 800V 6A TO220Manufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp's CDM2206-800LR is a N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a maximum drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 6 A at 25°C. The device offers a maximum on-resistance (Rds On) of 950 mOhm at 3 A and 10 V gate-source voltage. With a power dissipation capability of 110 W (Tc), it is suitable for demanding power conversion and switching tasks. Key parameters include input capacitance (Ciss) of 474.7 pF at 100 V and gate charge (Qg) of 24.3 nC at 10 V. The CDM2206-800LR is housed in a standard TO-220-3 package, facilitating integration into various power supply designs, industrial automation, and renewable energy systems. Operating temperature range extends from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 474.7 pF @ 100 V |
Request a Quote
Clients Also Buy
CEDM8001 BK PBFREE
MOSFET P-CH 20V 100MA SOT883
CP775-CWDM3011P-CT
MOSFET P-CH 30V 11A DIE
CZDM1003N TR
MOSFET N-CH 100V 3A SOT-223
